JPH0318347B2 - - Google Patents

Info

Publication number
JPH0318347B2
JPH0318347B2 JP56173825A JP17382581A JPH0318347B2 JP H0318347 B2 JPH0318347 B2 JP H0318347B2 JP 56173825 A JP56173825 A JP 56173825A JP 17382581 A JP17382581 A JP 17382581A JP H0318347 B2 JPH0318347 B2 JP H0318347B2
Authority
JP
Japan
Prior art keywords
diffusion region
transistor
channel mos
mos transistor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56173825A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5873147A (ja
Inventor
Yukio Myazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56173825A priority Critical patent/JPS5873147A/ja
Publication of JPS5873147A publication Critical patent/JPS5873147A/ja
Priority to US06/769,092 priority patent/US4689653A/en
Publication of JPH0318347B2 publication Critical patent/JPH0318347B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56173825A 1981-10-27 1981-10-27 半導体集積回路装置 Granted JPS5873147A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56173825A JPS5873147A (ja) 1981-10-27 1981-10-27 半導体集積回路装置
US06/769,092 US4689653A (en) 1981-10-27 1985-08-26 Complementary MOS integrated circuit including lock-up prevention parasitic transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56173825A JPS5873147A (ja) 1981-10-27 1981-10-27 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5873147A JPS5873147A (ja) 1983-05-02
JPH0318347B2 true JPH0318347B2 (en]) 1991-03-12

Family

ID=15967848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56173825A Granted JPS5873147A (ja) 1981-10-27 1981-10-27 半導体集積回路装置

Country Status (2)

Country Link
US (1) US4689653A (en])
JP (1) JPS5873147A (en])

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0654797B2 (ja) * 1986-08-06 1994-07-20 日産自動車株式会社 Ｃｍｏｓ半導体装置
US4791317A (en) * 1986-09-26 1988-12-13 Siemens Aktiengesellschaft Latch-up protection circuit for integrated circuits using complementary mos circuit technology
US4791316A (en) * 1986-09-26 1988-12-13 Siemens Aktiengesellschaft Latch-up protection circuit for integrated circuits using complementary MOS circuit technology
JPS648659A (en) * 1987-06-30 1989-01-12 Mitsubishi Electric Corp Supplementary semiconductor integrated circuit device
US5136355A (en) * 1987-11-25 1992-08-04 Marconi Electronic Devices Limited Interconnecting layer on a semiconductor substrate
JPH02168666A (ja) * 1988-09-29 1990-06-28 Mitsubishi Electric Corp 相補型半導体装置とその製造方法
US4939616A (en) * 1988-11-01 1990-07-03 Texas Instruments Incorporated Circuit structure with enhanced electrostatic discharge protection
US5406513A (en) * 1993-02-05 1995-04-11 The University Of New Mexico Mechanism for preventing radiation induced latch-up in CMOS integrated circuits
JP4548603B2 (ja) * 2005-06-08 2010-09-22 セイコーエプソン株式会社 半導体装置
RU2539869C1 (ru) * 2013-12-24 2015-01-27 Закрытое акционерное общество "Электронно-вычислительные информационные и инструментальные системы" (ЗАО "ЭЛВИИС") Радиационно-стойкая библиотека элементов на комплементарных металл-окисел-полупроводник транзисторах

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573509A (en) * 1968-09-09 1971-04-06 Texas Instruments Inc Device for reducing bipolar effects in mos integrated circuits
US3955210A (en) * 1974-12-30 1976-05-04 International Business Machines Corporation Elimination of SCR structure
JPS5238890A (en) * 1975-09-23 1977-03-25 Mitsubishi Electric Corp Semiconductor device
JPS53126280A (en) * 1977-04-11 1978-11-04 Hitachi Ltd Complementary type mis semiconductor device
GB1549130A (en) * 1977-06-01 1979-08-01 Hughes Microelectronics Ltd Cm Monolithic integrated circuit
JPS5939904B2 (ja) * 1978-09-28 1984-09-27 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
JPS5873147A (ja) 1983-05-02
US4689653A (en) 1987-08-25

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